PZTA96ST1G Datasheet, PDF (2/3 Pages) ON Semiconductor – High Voltage Transistor

1000
150°C
25°C
100
−55°C
10
PZTA96ST1G
TYPICAL CHARACTERISTICS
0.4
V_CE = 10 V
0.3
0.2
IC/IB = 10
150°C 25°C −55°C
0.1
1
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000
0
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 2. Collector−Emitter Saturation Voltage
1.0
1.0
0.8 −55°C
0.6 ^25°C
0.8 −55°C
0.6 ^25°C
0.4
150°C
0.2
0
0.1
1
IC/IB = 10
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage
0.4
150°C
0.2
0
0.1
V_CE = 10 V
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter “On” Voltage
1000
Cib
100
Cob
10
100
V_CE = 2 V
10
1
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Figure 5. Capacitances
1000
1
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain−Bandwidth Product
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