PZTA96ST1G Datasheet, PDF (1/3 Pages) ON Semiconductor – High Voltage Transistor

PZTA96ST1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V_CEO
− 450
Vdc
Collector−Base Voltage
V_CBO
− 450
Vdc
Emitter−Base Voltage
V_EBO
− 5.0
Vdc
Collector Current
I_C
− 500
mAdc
Total Power Dissipation Up to
T_A = 25°C (Note 1)
P_D
W
1.5
Storage Temperature Range
T_stg
−65 to +150
°C
Junction Temperature
T_J
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in².
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
°C
83.3
2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in².
ELECTRICAL CHARACTERISTICS (Note 3)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
Collector−Emitter Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
Emitter−Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
Collector−Base Cutoff Current
(V_CB = − 400 Vdc, I_E = 0)
Emitter−Base Cutoff Current
(V_BE = − 4.0 Vdc, I_C = 0)
V_(BR)CEO
− 450
V_(BR)CBO
− 450
V_(BR)EBO
−5.0
I_CBO
−
I_EBO
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I_C = − 10 mAdc, V_CE = − 10 Vdc)
h_FE
50
Saturation Voltages
(I_C = −20 mAdc, I_B = −2.0 mAdc)
(I_C = −20 mAdc, I_B = −2.0 mAdc)
V_CE(sat)
−
V_BE(sat)
−
3. T_A = 25°C unless otherwise noted.
4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%.
Max
−
−
−
− 0.1
− 0.1
150
− 0.6
− 1.0
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
−
Vdc
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 5
http://onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
4
123
SOT−223 (TO−261)
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
ZTA96G
G
1
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
PZTA96ST1G
SOT−223 1000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
PZTA96ST1/D