PZTA92T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Transistor PNP Silicon

PZTA92T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mAdc, I_B = 0)
V_(BR)CEO
Collector−Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
V_(BR)CBO
Emitter−Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
V_(BR)EBO
Collector-Base Cutoff Current
(V_CB = −200 Vdc, I_E = 0)
I_CBO
Emitter−Base Cutoff Current
(V_BE = −3.0 Vdc, I_C = 0)
I_EBO
ON CHARACTERISTICS
DC Current Gain
h_FE
(I_C = −1.0 mAdc, V_CE = −10 Vdc)
(I_C = −10 mAdc, V_CE = −10 Vdc)
(I_C = −30 mAdc, V_CE = −10 Vdc)
Saturation Voltages
(I_C = −20 mAdc, I_B = −2.0 mAdc)
(I_C = −20 mAdc, I_B = −2.0 mAdc)
V_CE(sat)
V_BE(sat)
DYNAMIC CHARACTERISTICS
Collector−Base Capacitance @ f = 1.0 MHz
C_cb
(V_CB = −20 Vdc, I_E = 0)
Current−Gain − Bandwidth Product
f_T
(I_C = −10 mAdc, V_CE = − 20 Vdc, f = 100 MHz)
3. Pulse Test Conditions, t_p = 300 ms, d 0.02.
Min
−300
−300
−5.0
−
−
25
40
40
−
−
−
50
300
250
200
150
100
50
0
0.1
T_J = +125°C
25°C
-55°C
1.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Max
−
−
−
−0.25
−0.1
−
−
−
− 0.5
− 0.9
6.0
−
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
−
Vdc
pF
MHz
V_CE = 10 Vdc
100
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