PZTA92T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Transistor PNP Silicon

PZTA92T1G
High Voltage Transistor
PNP Silicon
Features
• Complement to PZTA42T1G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
up to @ T_A = 25°C (Note 1)
V_CEO
V_CBO
V_EBO
I_C
P_D
−300
−300
−5.0
−500
1.5
Vdc
Vdc
Vdc
mAdc
W
Storage Temperature Range
T_stg
−65 to +150
°C
Junction Temperature
T_J
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
83.3
°C/W
2. Device mounted on a FR−4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
http://onsemi.com
SOT−223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
12
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
P2DG
G
1
P2D = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
PZTA92T1G
SOT−223 1,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 9
Publication Order Number:
PZTA92T1/D