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| PZT751T1G_10 Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP Silicon Planar Epitaxial Transistor | |||
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PZT751T1G
ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Collector--Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter--Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)CBO
80
V(BR)EBO
5.0
Base--Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
--
Collector--Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 2)
ICBO
--
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
Collector--Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Base--Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Base--Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
Current--Gain--Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ï£ 300 ms, Duty Cycle = 2.0%.
hFE
75
75
75
40
VCE(sat)
--
--
VBE(on)
--
VBE(sat)
--
fT
75
Max
Unit
--
Vdc
--
Vdc
--
Vdc
0.1
mAdc
100
nAdc
--
--
--
--
--
Vdc
0.5
0.3
1.0
Vdc
1.2
Vdc
--
MHz
http://onsemi.com
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