PZT651_16 Datasheet, PDF(2/4 Page) ON Semiconductor – NPN Silicon Planar Epitaxial Transistor

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PZT651_16 Datasheet, PDF (2/4 Pages) ON Semiconductor – NPN Silicon Planar Epitaxial Transistor

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PZT651

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

CollectorâEmitter Breakdown Voltage

(IC = 100 mAdc, IE = 0)

EmitterâBase Breakdown Voltage

(IE = 10 mAdc, IC = 0)

BaseâEmitter Cutoff Current

(VEB = 4.0 Vdc)

CollectorâBase Cutoff Current

(VCB = 80 Vdc, IE = 0)

V(BR)CEO

V(BR)CBO

V(BR)EBO

5.0

IEBO

ICBO

Vdc

mAdc

0.1

nAdc

100

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 50 mAdc, VCE = 2.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

hFE

CollectorâEmitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

Vdc

0.5

0.3

BaseâEmitter Voltages

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

Vdc

1.0

BaseâEmitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VBE(sat)

Vdc

1.2

CurrentâGain â Bandwidth

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width â¤ 300 ms, Duty Cycle = 2.0%

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