PZT651T1 Datasheet, PDF (2/6 Pages) ON Semiconductor – HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

PZT651T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
80
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
Base–Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
—
Collector–Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
—
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
hFE
75
75
75
40
Collector–Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
—
—
Base–Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
—
Current–Gain — Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
75
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%
Max
Unit
—
Vdc
—
Vdc
—
Vdc
0.1
µAdc
100
nAdc
—
—
—
—
—
Vdc
0.5
0.3
1.0
Vdc
1.2
Vdc
—
MHz
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data