PZT651T1 Datasheet, PDF (1/6 Pages) ON Semiconductor – HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
• High Current: 2.0 Amp
• The SOT–223 package can be soldered using wave or reflow.
• SOT–223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die.
• Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
• PNP Complement is PZT751T1
COLLECTOR 2,4
BASE
1
EMITTER 3
Order this document
by PZT651T1/D
PZT651T1
Motorola Preferred Device
SOT–223 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E–04, STYLE 1
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
Junction Temperature
TJ
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance from Junction–to–Ambient in Free Air
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R_θJA
TL
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Value
60
80
5.0
2.0
0.8
6.4
– 65 to 150
150
Max
156
260
10
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Unit
°C/W
°C
Sec
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996