NVF5P03T3G Datasheet, PDF (2/7 Pages) ON Semiconductor – Power MOSFET 5.2 A, 30 V

NTF5P03T3G, NVF5P03T3G
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage − Continuous
1 sq in
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ T_A = 25°C
Linear Derating Factor
Drain Current − Continuous @ T_A = 25°C
Continuous @ T_A = 70°C
Pulsed Drain Current (Note 1)
Minimum
FR−4 or G−10 PCB
10 seconds
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ T_A = 25°C
Linear Derating Factor
Drain Current − Continuous @ T_A = 25°C
Continuous @ T_A = 70°C
Pulsed Drain Current (Note 1)
V_DSS
V_DGR
V_GS
R_THJA
P_D
I_D
I_D
I_DM
R_THJA
P_D
I_D
I_D
I_DM
−30
−30
± 20
40
3.13
25
−5.2
−4.1
−26
80
1.56
12.5
−3.7
−2.9
−19
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range
T_J, T_stg
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25°C
(V_DD = −30 Vdc, V_GS = −10 Vdc, Peak I_L = −12 Apk, L = 3.5 mH, R_G = 25 W)
E_AS
mJ
250
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
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