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NVF5P03T3G Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 5.2 A, 30 V
NTF5P03T3G, NVF5P03T3G
Power MOSFET
5.2 A, 30 V
P−Channel SOT−223
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT−223 Surface Mount Package
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
http://onsemi.com
5.2 AMPERES, 30 VOLTS
RDS(on) = 100 mW
S
G
D
P−Channel MOSFET
4
1
2
3
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03 G
G
123
Gate Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
Package
SOT−223
(Pb−Free)
Shipping†
4000 / Tape &
Reel
NVF5P03T3G
SOT−223 4000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 5
Publication Order Number:
NTF5P03T3/D