NTTS2P03R2_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET -2.48 Amps, -30 Volts

NTTS2P03R2
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (continued)
Rating
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25°C
(V_DD = −30 Vdc, V_GS = −10 Vdc, Peak I_L = −3.0 Apk, L = 65 mH, R_G = 25 W)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted) (Note 6)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (V_GS = 0 Vdc, I_D = −250 mAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
Zero Gate Voltage Drain Current
(V_GS = 0 Vdc, V_DS = −30 Vdc, T_J = 25°C)
(V_GS = 0 Vdc, V_DS = −30 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = −20 Vdc, V_DS = 0 Vdc)
Gate−Body Leakage Current (V_GS = +20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage (V_DS = V_GS, I_D = −250 mAdc)
Temperature Coefficient (Negative)
I_DSS
I_GSS
I_GSS
V_GS(th)
Static Drain−to−Source On−State Resistance
(V_GS = −10 Vdc, I_D = −2.48 Adc)
(V_GS = −4.5 Vdc, I_D = −1.24 Adc)
Forward Transconductance (V_DS = −15 Vdc, I_D = −1.24 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = −24 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = −24 Vdc, I_D = −2.48 Adc,
V_GS = −10 Vdc, R_G = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = −24 Vdc, I_D = −1.24 Adc,
V_GS = −4.5 Vdc, R_G = 6.0 W)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V_DS = −24 Vdc,
V_GS = −4.5 Vdc,
I_D = −2.48 Adc)
BODY−DRAIN DIODE RATINGS (Note 7)
Diode Forward On−Voltage
(I_S = −2.48 Adc, V_GS = 0 Vdc)
(I_S = −2.48 Adc, V_GS = 0 Vdc,
T_J = 125°C)
Reverse Recovery Time
(I_S = −1.45 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
Reverse Recovery Stored Charge
6. Handling precautions to protect against electrostatic discharge is mandatory.
7. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle = 2%.
8. Switching characteristics are independent of operating junction temperature.
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_tot
Q_gs
Q_gd
V_SD
t_rr
t_a
t_b
Q_RR
Symbol
E_AS
T_L
Value
292.5
260
Unit
mJ
°C
Min
Typ
Max
Unit
−30
−
−
−30
−
Vdc
−
mV/°C
mAdc
−
−
−1.0
−
−
−25
−
−
−100 nAdc
−
−
100
nAdc
−1.0
−
−
−
−
−1.7
3.6
0.063
0.100
3.1
−3.0
−
0.085
0.135
−
Vdc
W
Mhos
−
500
−
pF
−
160
−
−
65
−
−
10
−
ns
−
20
−
−
40
−
−
35
−
−
16
−
ns
−
40
−
−
30
−
−
30
−
−
15
22
nC
−
3.2
−
−
4.0
−
−
−0.92
−1.3
Vdc
−
−0.72
−
−
38
−
ns
−
20
−
−
18
−
−
0.04
−
mC
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