NTTS2P03R2_05 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET -2.48 Amps, -30 Volts

NTTS2P03R2
Power MOSFET
−2.48 Amps, −30 Volts
P−Channel Enhancement Mode
Single Micro8t Package
Features
• Ultra Low R_DS(on)
• Higher Efficiency Extending Battery Life
• Miniature Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
V_DSS
V_GS
R_qJA
P_D
I_D
I_D
−30
V
"20
V
160
0.78
−2.48
−1.98
°C/W
W
A
A
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
R_qJA
P_D
I_D
I_D
70
1.78
−3.75
−3.0
°C/W
W
A
A
Thermal Resistance,
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 5)
Thermal Resistance ,
Junction−to−Ambient (Note 4)
Total Power Dissipation @ T_A = 25°C
Continuous Drain Current @ T_A = 25°C
Continuous Drain Current @ T_A = 70°C
Pulsed Drain Current (Note 5)
Operating and Storage
Temperature Range
R_qJA
P_D
I_D
I_D
I_DM
R_qJA
P_D
I_D
I_D
I_DM
T_J, T_stg
210
0.60
−2.10
−1.67
−17
°C/W
W
A
A
A
100
1.25
−3.02
−2.42
−24
−55 to
+150
°C/W
W
A
A
A
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Time ≤ 10 Seconds.
3. Minimum FR−4 or G−10 PCB, Steady State.
4. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Steady State.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 2
http://onsemi.com
−2.48 AMPERES
−30 VOLTS
85 mW @ V_GS = −10 V
Single P−Channel
D
G
S
8
1
Micro8
CASE 846A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
Source
Source
Source
Gate
1
8
2
7
3
6
4
5
(Top View)
Drain
Drain
Drain
Drain
WW
= Work Week
AE
= Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTS2P03R2
NTTS2P03R2G
Micro8
Micro8
(Pb−Free)
4000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTS2P03R2/D