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NTTFS4824N_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Power MOSFET
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NTTFS4824N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
2.7
57.7
187.8
30.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V to 11.5 V
ID = 20 A
ID = 10 A
VGS = 4.5 V
ID = 20 A
ID = 10 A
VDS = 1.5 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
VGS = 11.5 V, VDS = 15 V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
25
mV/°C
1.0
mA
10
±100
nA
1.9
2.5
V
6
mV/°C
3.7
5.0
mW
3.6
5.8
7.5
5.7
53
S
1750
2363
pF
350
473
170
255
12.6
18
nC
1.7
4.7
4.8
29
nC
13
ns
38
18
5.5
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