NTTFS4824N_13 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTTFS4824N
Power MOSFET
30 V, 69 A, Single N−Channel, m8FL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
Continuous Drain
Current R_qJA (Note 1)
V_GS
±20 V
T_A = 25°C
I_D
14.9 A
T_A = 85°C
10.8
Power Dissipation R_qJA
(Note 1)
T_A = 25°C
P_D
2.2 W
Continuous Drain
Current R_qJA ≤ 10 s
(Note 1)
T_A = 25°C
I_D
20.6 A
T_A = 85°C
14.9
Power Dissipation
R_qJA ≤ 10 s (Note 1)
Continuous Drain
Current R_qJA (Note 2)
Steady
State
T_A = 25°C
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJA (Note 2)
T_C = 25°C
Continuous Drain
Current R_qJC (Note 1)
T_C = 25°C
T_C = 85°C
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
P_D
I_D
P_D
I_D
P_D
I_DM
T_J,
T_stg
I_S
dV/dt
4.1 W
8.3
A
6.0
0.66 W
69
A
50
46.3 W
207
−55 to
+150
46.3
6.0
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
E_AS
(T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 38 A_pk, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
T_L
(1/8″ from case for 10 s)
72 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
I_D MAX
69 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
FLAT LEAD
MARKING DIAGRAM
1
S
D
S
4824
D
S AYWWG D
G
G
D
4824
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTTFS4824NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 5
Publication Order Number:
NTTFS4824N/D