NTR4101P_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – Trench Power MOSFET

NTR4101P, NTRV4101P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient − Steady State (Note 1)
R_qJA
170
Junction−to−Ambient − t < 10 s (Note 1)
R_qJA
100
Junction−to−Ambient − Steady State (Note 2)
R_qJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V_GS = 0 V, I_D = −250 mA)
Zero Gate Voltage Drain Current (Note 4)
(V_GS = 0 V, V_DS = −16 V)
Gate−to−Source Leakage Current
(V_GS = ±8.0 V, V_DS = 0 V)
V_(BR)DSS
−20
I_DSS
I_GSS
V
−1.0
mA
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V_GS = V_DS, I_D = −250 mA)
V_GS(th)
−0.4
−0.72
−1.2
V
Drain−to−Source On−Resistance
(V_GS = −4.5 V, I_D = −1.6 A)
(V_GS = −2.5 V, I_D = −1.3 A)
(V_GS = −1.8 V, I_D = −0.9 A)
R_DS(on)
mW
70
85
90
120
112
210
Forward Transconductance (V_DS = −5.0 V, I_D = −2.3 A)
g_FS
7.5
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C_iss
675
pF
Output Capacitance
(V_GS = 0 V, f = 1 MHz, V_DS = −10 V)
C_oss
100
Reverse Transfer Capacitance
C_rss
75
Total Gate Charge
(V_GS = −4.5 V, V_DS = −10 V, I_D = −1.6 A)
Q_G(tot)
7.5
8.5
nC
Gate−to−Source Gate Charge
(V_DS = −10 V, I_D = −1.6 A)
Q_GS
1.2
nC
Gate−to−Drain “Miller” Charge
(V_DS = −10 V, I_D = −1.6 A)
Q_GD
2.2
nC
Gate Resistance
R_G
6.5
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t_d(on)
7.5
ns
Rise Time
Turn−Off Delay Time
(V_GS = −4.5 V, V_DS = −10 V,
I_D = −1.6 A, R_G = 6.0 W)
t_r
t_d(off)
12.6
30.2
Fall Time
t_f
21.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(V_GS = 0 V, I_S = −2.4 A)
V_SD
−0.82
−1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
t_rr
(V_GS = 0 V,
dI_SD/dt = 100 A/ms, I_S = −1.6 A)
t_a
t_b
12.8
15
ns
9.9
ns
3.0
ns
Reverse Recovery Charge
Q_rr
1008
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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