NTR4101P_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Trench Power MOSFET

NTR4101P, NTRV4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low R_DS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• NTRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
−2.4 A
−1.7
t ≤ 10 s T_A = 25°C
−3.2
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
0.73 W
t ≤ 10 s
1.25
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C
P_D
−1.8 A
−1.3
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
I_DM
−18
A
ESD
225
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V_GS = −8 V, I_L = −1.8 Apk, L = 10 mH,
R_G = 25 W)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T_J,
T_STG
I_S
EAS
−55 to °C
150
−2.4 A
16
mJ
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
V_(BR)DSS
−20 V
R_DS(ON) TYP
70 mW @ −4.5 V
90 mW @ −2.5 V
112 mW @ −1.8 V
I_D MAX
−3.2 A
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
TR4 MG
G
1
Gate
2
Source
TR4 = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NTR4101PT1G _SOT−23
NTRV4101PT1G ^{(Pb−Free)}
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
October, 2016 − Rev. 12
Publication Order Number:
NTR4101P/D