NTNS3164NZ_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – Small Signal MOSFET 20 V, 361 mA, Single N.Channel, SOT.883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
R_θJA
Junction−to−Ambient – t ≤ 5 s (Note 3)
R_θJA
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm², 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V_(BR)DSS/
T_J
I_D = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I_DSS
V_GS = 0 V, V_DS = 20 V T_J = 25°C
Gate−to−Source Leakage Current
I_GSS
V_DS = 0 V, V_GS = ±5 V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V_GS(TH)
V_GS = V_DS, I_D = 250 mA
0.4
Negative Threshold Temperature
Coefficient
V_GS(TH)/T_J
Drain−to−Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
R_DS(on)
g_FS
V_SD
V_GS = 4.5 V, I_D = 200 mA
V_GS = 2.5 V, I_D = 100 mA
V_GS = 1.8 V, I_D = 50 mA
V_GS= 1.5 V, I_D = 10 mA
V_DS = 5 V, I_D = 200 mA
V_GS = 0 V, I_S = 100 mA
Input Capacitance
C_ISS
Output Capacitance
C_OSS
V_GS = 0 V, freq = 1 MHz, V_DS = 10 V
Reverse Transfer Capacitance
C_RSS
Total Gate Charge
Q_G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Q_G(TH)
Q_GS
V_GS = 4.5 V, V_DS = 10 V;
I_D = 200 mA
Gate−to−Drain Charge
Q_GD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
t_d(ON)
Rise Time
Turn−Off Delay Time
t_r
t_d(OFF)
V_GS = 4.5 V, V_DD = 10 V,
I_D = 200 mA, R_G = 2 W
Fall Time
t_f
4. Switching characteristics are independent of operating junction temperatures
Max
Unit
806
°C/W
575
Typ
Max
Unit
V
23
mV/°C
1
mA
±10
mA
1.0
V
1.8
mV/°C
0.5
0.7
0.7
1.0
W
1.0
2.0
1.2
4.0
1.26
S
0.75
1.2
V
24
5.0
pF
3.4
0.8
0.1
nC
0.2
0.1
10
11
ns
67
31
http://onsemi.com
2