NTMFS4921N Datasheet, PDF (2/7 Pages) ON Semiconductor – Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL

NTMFS4921N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t v 10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R_qJC
R_qJA
R_qJA
R_qJA
Value
3.25
58.3
144.1
22.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V_(BR)DSS
V_(BR)DSS/
T_J
I_DSS
I_GSS
V_GS = 0 V, I_D = 250 mA
V_GS = 0 V,
V_DS = 24 V
T_J = 25 °C
T_J = 125°C
V_DS = 0 V, V_GS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V_GS(TH)
V_GS(TH)/T_J
R_DS(on)
Forward Transconductance
g_FS
CHARGES AND CAPACITANCES
V_GS = V_DS, I_D = 250 mA
V_GS = 10 V to
11.5 V
I_D = 30 A
I_D = 15 A
V_GS = 4.5 V
I_D = 30 A
I_D = 15 A
V_DS = 1.5 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C_ISS
C_OSS
C_RSS
Q_G(TOT)
Q_G(TH)
Q_GS
Q_GD
Q_G(TOT)
V_GS = 0 V, f = 1 MHz, V_DS = 12 V
V_GS = 4.5 V, V_DS = 15 V; I_D = 30 A
V_GS = 11.5 V, V_DS = 15 V,
I_D = 30 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t_d(ON)
Rise Time
Turn−Off Delay Time
t_r
t_d(OFF)
V_GS = 4.5 V, V_DS = 15 V, I_D = 15 A,
R_G = 3.0 W
Fall Time
t_f
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.45
Typ
25
1.8
5.3
5.2
8.6
8.4
54
1400
282
136
10.7
1.4
4.1
3.8
25
13.3
38
16.6
3.8
Max
1
10
±100
2.5
6.95
10.8
16
Unit
V
mV/°C
mA
nA
V
mV/°C
mW
S
pF
nC
nC
ns
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