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NTD30N02G Datasheet, PDF (2/5 Pages) ON Semiconductor – Power MOSFET 30 Amps, 24 Volts
NTD30N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 15 Adc)
RDS(on)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 20 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 20 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 2.5 W)
tr
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 20 Vdc, ID = 15 Adc,
VGS = 4.5 Vdc, RG = 2.5 W)
tr
td(off)
Fall Time
tf
Gate Charge
QT
(VDS = 20 Vdc, ID = 30 Adc,
VGS = 4.5 Vdc) (Note 3)
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 15 Adc, VGS = 0 Vdc)
VSD
(IS = 30 Adc, VGS = 0 Vdc) (Note 3)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
trr
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
ta
tb
Reverse Recovery Stored Charge
QRR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
Unit
24
26.5
−
25.5
Vdc
−
−
mV/°C
mAdc
−
−
0.8
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
1.0
2.1
3.0
−
−4.1
−
mV/°C
mW
−
−
14.5
−
11.2
14.5
−
20
24
−
20
−
mhos
−
1000
−
pF
−
425
−
−
175
−
−
7.0
15
ns
−
28
55
−
22
35
−
12
20
−
12.5
−
ns
−
115
−
−
15
−
−
17
−
−
14.4
20
nC
−
4.0
−
−
8.5
−
−
0.95
1.2
Vdc
−
1.10
−
−
0.80
−
−
30
−
ns
−
14.5
−
−
15.5
−
−
0.013
−
mC
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