NSVR351SDSA3 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSVR351SDSA3
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Forward Voltage
VF
IF = 1 mA
0.23 V
Forward Current
IF
VF = 0.5 V
30
mA
Reverse Current
IR
VR = 0.5 V
25 µA
Interterminal Capacitance
C
VR = 0.2 V, f = 1 MHz
0.69
0.9 pF
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The specifications shown above are for each individual diode.
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