NSVR351SDSA3 Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSVR351SDSA3
Advance Information
Schottky Barrier Diode
for Mixer and Detector
This schottky barrier diode is designed to realize compact and efficient
designs. Two schottky barrier diodes are incorporated in one SC-59
package. The use of dual schottky barrier diodes can reduce both system
cost and board space. This schottky barrier diode is AEC-Q101 qualified
and PPAP capable for automotive applications.
Features
Series connection of 2 elements in a small-sized package
 Small Interterminal Capacitance (C = 0.69 pF typ)
 Small Forward Voltage (VF = 0.23 V max)
 Pb-Free, Halogen Free and RoHS compliance
 AEC-Q101 qualified and PPAP capable
Typical Applications
 Level Detector for Radio
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Reverse Voltage
VRM
5
V
Forward Current
IF
30
mA
Operating Junction and Storage Temperature ^{Tj, Tstg}
55 to 125
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
5 V, 30 mA
C = 0.69 pF typ
Shottky Barrier Diode
3
1
2
SC-59 / CP3
ELECTRICAL CONNECTION
3
1 : Anode
2 : Cathode
1
2 ^{3 : Anode / Cathode}
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 4 of this data sheet
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
1
July 2016 - Rev. P1
Publication Order Number :
NSVR351SDSA3/D