NSVJ3910SB3_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – N-Channel JFET

NSVJ3910SB3
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Gate-to-Drain Breakdown Voltage ^V(BR)GDS IG = 10A, VDS = 0V
25
V
Gate Cutoff Current
IGSS
VGS = 10V, VDS = 0V
1.0 nA
Cutoff Voltage
VGS(off)
VDS = 5V, ID = 100A
0.6
1.2 1.8 V
Drain Current
IDSS
VDS = 5V, VGS = 0V
20
40 mA
Forward Transfer Admittance
| yfs |
VDS = 5V, VGS = 0V, f = 1kHz
30
40
mS
Input Capacitance
Reverse Transfer Capacitance
Ciss
Crss
VDS = 5V, VGS = 0V, f = 1MHz
6.0
pF
2.3
pF
Noise Figure
NF
VDS = 5V, VGS = 0V f = 100MHz
2.1
2.8 dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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