NSVJ3910SB3_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel JFET

NSVJ3910SB3
N-Channel JFET
25V, 20 to 40mA, 40mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
Features
 High Forward Transfer Admittance
 High Breakdown Voltage
 Low Input Capacitance
 Low Noise Figure
 Pb-Free and RoHS compliance
 AEC-Q101 qualified and PPAP capable
Typical Applications
Low Noise Amplifier for Automotive AM Radio
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSX
25
V
Gate-to-Drain Voltage
VGDS
25
V
Gate Current
IG
10
mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
400 mW
Operating Junction and
Storage Temperature
TJ, Tstg
55 to 150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
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ELECTRICAL CONNECTION
N-Channel
3
1 : Source
2 : Drain
3 : Gate
1
2
3
1
2 CPH3
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
© Semiconductor Components Industries, LLC, 2016
1
April 2016 - Rev. 0
Publication Order Number :
NSVJ3910SB3/D