NSVF3007SG3 Datasheet, PDF (2/10 Pages) ON Semiconductor – RF Transistor for Low Noise Amplifier

NSVF3007SG3
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0 A
1.0 A
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0 A
1.0 A
DC Current Gain
hFE
VCE = 5 V, IC = 5 mA
60
150
Gain-Bandwidth Product
Forward Transfer Gain
fT
| S21e |²
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA, f = 1 GHz
6
8
9
12
GHz
dB
Noise Figure
NF
VCE = 5 V, IC = 10 mA, f = 1 GHz
1.2
1.8 dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
IC -- VCE
30
450^μA
400^μA
350^μA
25
300^μA
250^μA
20
200^μA
15
150μA
10
100μA
30
VCE=5V
25
20
15
10
IC -- VBE
5
0
0
1000
7
5
3
2
100
7
5
3
2
50μA
IB=0μA
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
VCE=5V
5
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
Cob -- VCB
10
f=1MHz
7
5
3
2
1.0
7
5
3
2
10
0.1
1.0
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector Current, IC -- mA
Cre -- VCB
f=1MHz
7
5
0.1
0.1
100
7
5
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector-to-Base Voltage, VCB -- V
fT -- IC
VCE=5V
f=1GHz
3
2
10
3
7
5
2
3
2
0.1
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector-to-Base Voltage, VCB -- V
1.0
1.0
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2
23
5 7 ₁₀
23
Collector Current, IC -- mA
5 7 ₁₀₀