NSVF3007SG3 Datasheet, PDF (1/10 Pages) ON Semiconductor – RF Transistor for Low Noise Amplifier

NSVF3007SG3
Advance Information
RF Transistor
for Low Noise Amplifier
This RF transistor is designed for low noise amplifier applications. MCPH
package is suitable for use under high temperature environment because it
has superior heat radiation characteristics. This RF transistor is AEC-Q101
qualified and PPAP capable for automotive applications.
Features
 Low-noise use
: NF = 1.2 dB typ. (f = 1 GHz)
 High cut-off frequency : fT = 8 GHz typ. (VCE = 5 V)
 High gain
: |S21e|² = 12 dB typ. (f = 1 GHz)
 AEC-Q101 qualified and PPAP capable
 MCPH3 package is pin-compatible with SC-70FL
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Low Noise Amplifier for FM Radio
 Low Noise Amplifier for RKE
 RF Amplifier for ADAS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30 mA
Collector Dissipation
PC
350 mW
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
www.onsemi.com
12 V, 30 mA
fT = 8 GHz typ.
RF Transistor
ELECTRICAL CONNECTION
NPN
3
1
1 : Base
2 : Emitter
2 3 : Collector
MARKING
3
1
2
MCPH3
ORDERING INFORMATION
See detailed ordering and shipping
information on page 10 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
1
December 2016 - Rev. P0
Publication Order Number :
NSVF3007SG3/D