NSVD4001DR2G Datasheet, PDF (2/8 Pages) ON Semiconductor – High Current LED Driver

NUD4001, NSVD4001
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Continuous Input Voltage
Non−repetitive Peak Input Voltage (t v 1.0 ms)
Output Current
(For V_drop ≤ 2.2 V) (Note 1)
Output Voltage
Human Body Model (HBM)
V_in
V_p
I_out
V_out
ESD
30
V
60
V
500
mA
28
V
1000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V_drop = V_in – 0.7 V − V_LEDs.
THERMAL CHARACTERISTICS
Characteristic
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature
Total Power Dissipation (Note 2)
Derating above 25°C (Figure 3)
Thermal Resistance, Junction–to–Ambient (Note 2)
Thermal Resistance, Junction–to–Lead (Note 2)
2. Mounted on FR−4 board, 2 in sq pad, 2 oz coverage.
Symbol
T_A
T_J
T_STG
P_D
R_qJA
R_qJL
Value
−40 to +125
150
−55 to +150
1.13
9.0
110
77
Unit
°C
°C
°C
W
mW/°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Output Current1
(V_in = 12 V, R_ext = 2.0 W, V_LEDs = 10 V)
Output Current2
(V_in = 30 V, R_ext = 7.0 W, V_LEDs = 24 V)
Bias Current
(V_in = 12 V, R_ext = Open, V_LEDs = 10 V)
Voltage Overhead (Note 3)
3. V_over = V_in – V_LEDs.
Symbol
I_out1
I_out2
I_Bias
V_over
Min
Typ
Max Unit
305
325
345
mA
95
105
115
mA
−
5.0
8.0
mA
1.4
−
−
V
http://onsemi.com
2