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NSVBAS21SLT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Series High Voltage Switching Diode
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BAS21SLT1G, NSVBAS21SLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
IR
−
−
V(BR)
250
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
VF
−
−
CD
−
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
Max
0.1
100
−
1000
1250
5.0
50
Unit
mAdc
Vdc
mV
pF
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
1000
800
600
400
200
1
1
TA = −55°C
25°C
155°C
10
100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 155°C
TA = 25°C
TA = −55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
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