English
Language : 

NSTB60BDW1 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Bias Resistor Transistor Combination
NSTB60BDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
Collector-Base Breakdown Voltage (IC = −50 μAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current (VCB = −50 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = −6.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc) (Note 3)
DC Current Gain (VCE = −10 V, IC = −5.0 mA) (Note 3)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 100 MHz)
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
Q2
Collector-Base Breakdown Voltage (IC = 50 μA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0) (Note 3)
V(BR)CBO
−50
−
V(BR)CEO
−50
−
−
Vdc
−
Vdc
V(BR)EBO
−6.0
−
−
Vdc
ICBO
−
−
−0.1
mA
IEBO
−
−
−0.1
mA
VCE(sat)
−
−
−0.5
Vdc
hFE
120
−
560
−
fT
−
140
−
MHz
COB
−
3.5
−
pF
V(BR)CBO
50
−
V(BR)CEO
50
−
−
Vdc
−
Vdc
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 5.0 mA) (Note 3)
ICBO
−
ICEO
−
IEBO
−
VCE(sat)
−
−
100
nAdc
−
500
nAdc
−
0.13
mAdc
−
0.25
Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (Note 3)
hFE
80
−
−
Output Voltage (on) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (Note 3)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (Note 3)
VOH
4.9
−
−
Vdc
Input Resistor (Note 3)
R1
15.4
22
28.6
kΩ
Resistor Ratio (Note 3)
R2/R1
1.70
2.13
2.55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
www.onsemi.com
2