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NSTB60BDW1 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Bias Resistor Transistor Combination | |||
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NSTB60BDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
Collector-Base Breakdown Voltage (IC = â50 μAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = â1.0 mAdc, IB = 0)
EmitterâBase Breakdown Voltage (IE = â50 mAdc, IE = 0)
CollectorâBase Cutoff Current (VCB = â50 Vdc, IE = 0)
EmitterâBase Cutoff Current (VEB = â6.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage
(IC = â50 mAdc, IB = â5.0 mAdc) (Note 3)
DC Current Gain (VCE = â10 V, IC = â5.0 mA) (Note 3)
Transition Frequency
(VCE = â12 Vdc, IC = â2.0 mAdc, f = 100 MHz)
Output Capacitance (VCB = â12 Vdc, IE = 0 Adc, f = 1.0 MHz)
Q2
Collector-Base Breakdown Voltage (IC = 50 μA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0) (Note 3)
V(BR)CBO
â50
â
V(BR)CEO
â50
â
â
Vdc
â
Vdc
V(BR)EBO
â6.0
â
â
Vdc
ICBO
â
â
â0.1
mA
IEBO
â
â
â0.1
mA
VCE(sat)
â
â
â0.5
Vdc
hFE
120
â
560
â
fT
â
140
â
MHz
COB
â
3.5
â
pF
V(BR)CBO
50
â
V(BR)CEO
50
â
â
Vdc
â
Vdc
CollectorâBase Cutoff Current (VCB = 50 V, IE = 0)
CollectorâEmitter Cutoff Current (VCE = 50 V, IB = 0)
EmitterâBase Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 5.0 mA) (Note 3)
ICBO
â
ICEO
â
IEBO
â
VCE(sat)
â
â
100
nAdc
â
500
nAdc
â
0.13
mAdc
â
0.25
Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (Note 3)
hFE
80
â
â
Output Voltage (on) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (Note 3)
VOL
â
â
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (Note 3)
VOH
4.9
â
â
Vdc
Input Resistor (Note 3)
R1
15.4
22
28.6
kΩ
Resistor Ratio (Note 3)
R2/R1
1.70
2.13
2.55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
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