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NST847BDP6T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual General Purpose Transistor
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NST847BDP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mA)
Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage (IC = 10 mA)
Emitter −Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CEO
45
−
−
V
V(BR)CES
50
−
−
V
V(BR)CBO
50
−
−
V
V(BR)EBO
6.0
−
−
V
ICBO
−
−
15
nA
−
−
5.0
mA
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
200
290
450
−
VCE(sat)
−
−
−
0.25
V
−
0.6
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
0.7
−
V
−
0.9
−
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
−
−
770
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
Cobo
−
Cibo
−
NF
−
−
4.5
pF
−
10
pF
dB
−
10
0.18
0.16 IC/IB = 10
0.14
0.12
0.10
VCE(sat) = 150°C
0.08
25°C
0.06
0.04
−55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
200 −55°C (5.0 V)
−55°C (1.0 V)
100
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
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