NST847BDP6T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor

NST847BDP6T5G
Dual General Purpose
Transistor
The NST847BDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h_FE, 200−450
• Low V_CE(sat), ≤ 0.25 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
MAXIMUM RATINGS
NST847BDP6T5G
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
HBM
MM
V_CEO
V_CBO
V_EBO
I_C
ESD
Class
45
Vdc
50
Vdc
6.0
Vdc
100 mAdc
2
B
65 ⁴
12 ³
SOT−963
CASE 527AD
PLASTIC
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
Symbol
P_D
Max
240
1.9
Unit
mW
mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
R_qJA
P_D
520
°C/W
280
mW
2.2 mW/°C
JMG
G
1
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
R_qJA
Symbol
P_D
446
Max
350
2.8
°C/W
Unit
mW
mW/°C
J = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R_qJA
357
°C/W
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
P_D
420
mW
3.4 mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R_qJA
297
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
ORDERING INFORMATION
Device
Package
Shipping^†
NST847BDP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
April, 2008 − Rev. 0
Publication Order Number:
NST847BDP6/D