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NSS40400CF8T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – 40 V, 7 A, Low VCE(sat) PNP Transistor | |||
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NSS40400CF8T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = â10 mAdc, IB = 0)
V(BR)CEO
Collector âBase Breakdown Voltage
(IC = â0.1 mAdc, IE = 0)
V(BR)CBO
Emitter âBase Breakdown Voltage
(IE = â0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = â60 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = â6.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = â1.0 A, VCE = â2.0 V)
(IC = â1.5 A, VCE = â2.0 V)
(IC = â2.0 A, VCE = â2.0 V)
(IC = â3.0 A, VCE = â2.0 V)
Collector âEmitter Saturation Voltage (Note 4)
(IC = â0.1 A, IB = â0.010 A)
(IC = â1.0 A, IB = â0.010 A)
(IC = â2.0 A, IB = â0.02 A)
(IC = â3.0 A, IB = â0.030 A)
(IC = â4.0 A, IB = â0.400 A)
hFE
VCE(sat)
Base âEmitter Saturation Voltage (Note 4)
(IC = â1.0 A, IB = â0.01 A)
VBE(sat)
Base âEmitter Turnâon Voltage (Note 4)
(IC = â2.0 A, VCE = â3.0 V)
VBE(on)
Cutoff Frequency
fT
(IC = â100 mA, VCE = â5.0 V, f = 100 MHz)
Input Capacitance (VEB = â0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = â3.0 V, f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%
Cibo
Cobo
Min
â40
â60
â5.0
â
â
100
100
100
100
â
â
â
â
â
â
â
100
â
â
Typical
Max
Unit
Vdc
â
Vdc
â
â
Vdc
â
â
mAdc
â
â0.1
mAdc
â
â0.1
220
220
220
220
â0.010
â0.127
â0.240
â0.250
â0.180
â0.82
â0.82
â
â
400
â
â
â0.015
â0.145
â0.30
â0.45
â0.35
â0.85
â0.875
â
650
100
V
V
V
MHz
pF
pF
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