NSS40301MZ4T1G Datasheet, PDF (2/6 Pages) ON Semiconductor – Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)

NSS40301MZ4
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I_C = 10 mAdc, I_B = 0 Adc)
Emitter−Base Voltage (I_E = 50 mAdc, I_C = 0 Adc)
Collector Cutoff Current (V_CB = 40 Vdc)
Emitter Cutoff Current (V_BE = 6.0 Vdc)
ON CHARACTERISTICS (Note 3)
V_CEO(sus)
40
V_EBO
6.0
I_CBO
−
I_EBO
−
Collector−Emitter Saturation Voltage
(I_C = 0.5 Adc, I_B = 50 mAdc)
(I_C = 1.0 Adc, I_B = 20 mAdc)
(I_C = 3.0 Adc, I_B = 0.3 Adc)
Base−Emitter Saturation Voltage (I_C = 1.0 Adc, I_B = 0.1 Adc)
Base−Emitter On Voltage (I_C = 1.0 Adc, V_CE = 2.0 Vdc)
DC Current Gain
(I_C = 0.5 Adc, V_CE = 1.0 Vdc)
(I_C = 1.0 Adc, V_CE = 1.0 Vdc)
(I_C = 3.0 Adc, V_CE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
V_CE(sat)
−
−
−
V_BE(sat)
−
V_BE(on)
−
h_FE
220
200
100
Output Capacitance (V_CB = 10 Vdc, f = 1.0 MHz)
Input Capacitance (V_EB = 5.0 Vdc, f = 1.0 MHz)
Current−Gain − Bandwidth Product (Note 4)
(I_C = 500 mA, V_CE = 10 V, F_test = 1.0 MHz)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. f_T = |h_FE| • f_test
C_ob
−
C_ib
−
f_T
−
Symbol
R_qJA
R_qJA
T_L
Max
64
155
260
Typ
Max
−
−
−
−
−
100
−
100
−
0.050
−
0.100
−
0.200
−
1.0
−
0.9
−
−
500
−
25
−
170
−
215
−
2.5
2.0
1.5
1.0
0.5
0
25
T_C
T_A
50
75
100
125
150
T_J, TEMPERATURE (°C)
Figure 1. Power Derating
Unit
°C/W
°C
Unit
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
−
pF
pF
MHz
http://onsemi.com
2