NSS40301MZ4T1G Datasheet, PDF (1/6 Pages) ON Semiconductor – Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)

NSS40301MZ4
Bipolar Power Transistors
40 V, 3.0 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V_CE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• Complement to NSS40300MZ4 Series
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are
RoHS Compliant
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V_CEO
40
Vdc
Collector−Base Voltage
V_CB
40
Vdc
Emitter−Base Voltage
V_EB
6.0
Vdc
Base Current − Continuous
I_B
1.0
Adc
Collector Current − Continuous
I_C
3.0
Adc
Collector Current − Peak
I_CM
5.0
Adc
Total Power Dissipation
P_D
W
Total P_D @ T_A = 25°C (Note 1)
2.0
Total P_D @ T_A = 25°C (Note 2)
0.80
Operating and Storage Junction
Temperature Range
T_J, T_stg – 55 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
http://onsemi.com
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2, 4
B1 E3
Schematic
4
12 ₃
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
40301G
1
A
Y
W
40301
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
BCE
12 3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 3
Publication Order Number:
NSS40301MZ4/D