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NSS12200WT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – 12 V, 3 A, Low VCE(sat) PNP Transistor
NSS12200WT1G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 6
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Symbol
PD (Note 1)
RqJA (Note 1)
PD (Note 2)
RqJA (Note 2)
RqJL
PD Single
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current, (VCB = −12 Vdc, IE = 0)
Collector−Emitter Cutoff Current, (VCES = −12 Vdc, IE = 0)
Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −0.5 A, VCE = −1.5 V)
(IC = −0.8 A, VCE = −1.5 V)
(IC = −1.0 A, VCE = −1.5 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.5 A, IB = −10 mA)
(IC = −0.8 A, IB = −16 mA)
(IC = −1.0 A, IB = −20 mA)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −20 mA)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −1.5 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance
(VCB = −1.5 V, f = 1.0 MHz)
1. FR−4, Minimum Pad, 1 oz Coverage.
2. FR−4, 1″ Pad, 1 oz Coverage.
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
−12
−12
−5.0
−
−
−
100
100
100
−
−
−
−
−
−
−
Max
450
3.6
275
650
5.2
192
105
1.4
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
W
°C
Typ
Max
Unit
−15
−25
−7.0
−0.02
−0.03
−0.03
−
Vdc
−
Vdc
−
Vdc
−0.1
mAdc
−0.1
mAdc
−0.1
mAdc
180
165
160
−0.10
−0.14
−0.17
−0.84
−0.81
100
50
−
300
−
−0.160
−0.235
−0.290
−0.95
−0.95
−
65
V
V
V
MHz
pF
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