English
Language : 

NSR30CM3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Series Schottky Barrier Diodes
◁
NSR30CM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mA)
Forward Voltage (IF = 30 mA)
Forward Voltage (IF = 100 mA)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1)
V(BR)R
30
CT
−
IR
−
VF
−
VF
−
VF
−
trr
−
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
VF
−
VF
−
IF
−
IFRM
−
IFSM
−
Typ
−
7.6
0.5
0.22
0.41
0.52
−
0.29
0.35
−
−
−
Max
Unit
−
V
10
pF
2.0
mA
0.24
V
0.5
V
0.8
V
5.0
ns
0.32
V
0.40
V
200
mA
300
mA
600
mA
http://onsemi.com
2
 ▷