NSR30CM3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Series Schottky Barrier Diodes

NSR30CM3T5G
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I_F = 10 mA
• This is a Pb−Free Device
MAXIMUM RATINGS (T_J = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
30
Volts
P_F
240
mW
1.9
mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction−to−Ambient (Note 1)
I_F
T_J
T_stg
R_qJA
200 Max
125 Max
−55 to +150
525
mA
°C
°C
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 board with minimum mounting pad.
http://onsemi.com
30 V
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
1
ANODE
3
CATHODE
2
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
5C D
2
STYLE 3
1
1
5C = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
NSR30CM3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 1
Publication Order Number:
NSR30CM3T5G/D