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NSR1030QMUTAG Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Full Bridge
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NSR1030QMUTAG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 1.0 mA)
V(BR)
30
−
−
V
Reverse Leakage (VR = 30 V)
Forward Voltage (IF = 0.5 A)
Forward Voltage (IF = 1.0 A)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA)
IR
−
4.0
20
mA
VF
−
0.43
0.49
V
VF
−
0.49
0.60
V
trr
−
25
−
ns
Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz)
5. All specifications pertain to a single diode.
CT
−
70
−
pF
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
0.1 mF
tr
tp
t
IF
10%
trr
t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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