NSR1030QMUTAG Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Full Bridge

NSR1030QMUTAG
1A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR1030QMUTAG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package
that is ideal for space constrained wireless applications.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.49 V (Typ) @ I_F = 1 A
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
• Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS (T_J = 125°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Current Surge Peak
(60 Hz, 1 cycle)
V_R
30
V
I_F
1.0
A
I_FSM
12
A
Non−Repetitive Peak Forward Current
I_FSM
A
(Square Wave, T_J = 25°C prior to surge)
t = 1 ms
40
t = 1 ms
10
t=1s
3.0
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 2)
1.80
18
W
mW/°C
Thermal Resistance Junction to Ambient R_qJA
55.5
(Note 2)
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 3)
0.70
7.0
W
mW/°C
Thermal Resistance Junction to Ambient R_qJA
142
(Note 3)
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 4)
0.80
8.0
W
mW/°C
Thermal Resistance Junction to Ambient R_qJA
125
(Note 4)
°C/W
Junction Temperature
T_J
+125
°C
Storage Temperature Range
T_stg
−55 to
°C
+150
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm², 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm², 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm², 2 oz. copper trace, still air.
www.onsemi.com
UDFN4 3x3
CASE 517DB
MARKING
DIAGRAM
1
1030
AYWWG
G
1030 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
DEVICE SCHEMATIC
ORDERING INFORMATION
Device
Package
Shipping†
NSR1030QMUTAG UDFN4 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 0
Publication Order Number:
NSR1030QMU/D