NSR0320MW2T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diodes

NSR0320MW2T1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Total Capacitance (V_R = 5.0 V, f = 1.0 MHz)
Reverse Leakage (V_R = 15 V)
Reverse Leakage (V_R = 2.0 V @ 85° C)
Reverse Leakage (V_R = 15.0 V @ 85° C)
Forward Voltage (I_F = 10 mAdc)
Forward Voltage (I_F = 100 mAdc)
Forward Voltage (I_F = 900 mAdc)
C_T
−
I_R
−
I_R
−
I_R
−
V_F
−
V_F
−
V_F
−
Typ
Max
Unit
25
29
pF
10
50
mAdc
200
300
mA
450
1000
mA
0.24
0.27
Vdc
0.30
0.35
Vdc
0.45
0.50
Vdc
1000
100
150°C
10000
1000
100
150°C
125°C
85°C
10
85°C
10
−55°C
1
25°C _{−45°C}
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
25°C
5
10
15
20
25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
140
120
100
80
60
40
20
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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