NSR0320MW2T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diodes

NSR0320MW2T1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Features
• Low Forward Voltage − 0.24 Volts (Typ) @ I_F = 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Revese Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
V_RM
P_F
20
Vdc
23
V
200
mW
2.0
mW/°C
Forward Current (DC)
Continuous
I_F
A
1
Forward Current
t = 8.3 ms Half Sinewave
I_F
A
5
Junction Temperature
Storage Temperature Range
T_J
125 Max
°C
T_stg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING
DIAGRAM
RD MG
G
RD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSR0320MW2T1 SOD−323 3000/Tape & Reel
NSR0320MW2T1G SOD−323 3000/Tape & Reel
(Pb−Free)
NSR0320MW2T3G SOD−323 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
Publication Order Number:
NSR0320MW2T1/D