NSR0240MX Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0240MX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Junction and Storage Temperature Range
1. FR−4, 20 mm², 1 oz. Cu.
Symbol
Min
R_qJA
P_D
T_J, T_stg
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
I_R
(V_R = 25 V)
(V_R = 40 V)
Forward Voltage
V_F
(I_F = 0.1 mA)
(I_F = 1.0 mA)
(I_F = 10 mA)
(I_F = 100 mA)
(I_F = 200 mA)
Total Capacitance
CT
(V_R = 1.0 V, f = 1 MHz)
Typ
Max
Unit
400
300
−55 to +150
°C/W
mW
°C
Typ
Max
Unit
mA
0.2
0.55
0.8
5.0
V
0.21
0.24
0.27
0.30
0.34
0.365
0.46
0.50
0.54
0.60
7.0
pF
1000
100
125°C
10
1 ^150°C
0.1
0.01
0.001 ^{85°C 25°C}
−40°C
0
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0E−02
1.0E−03
150°C
1.0E−04
1.0E−05
1.0E−06
1.0E−07
125°C
85°C
75°C
25°C
1.0E−08
−40°C
1.0E−09
1.0E−10
0.6
0 5 10 15 20 25 30 35 40 45
V_R, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
14
12
T_A = 25°C
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
V_R, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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