NSR0240MX Datasheet, PDF (1/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0240MX
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240MX in a X2DFN2 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop − 460 mV @ 100 mA
• Low Reverse Current − 0.2 mA @ 25 V VR
• 200 mA of Continuous Forward Current
• Very High Switching Speed
• Low Capacitance − CT = 7 pF
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Forward Surge Current,
Square Wave, 10 ms
V_R
I_F
I_FSM
40
V
200 mA
3.0
A
Repetitive Peak Forward Current,
Square Wave, 1.0 ms, D.C. = 25%
I_FRM
1.0
A
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
X2DFN2
RM
CASE 714AB
R = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR0240MXT5G X2DFN2 8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 1
Publication Order Number:
NSR0240MX/D