NSR01L30MUT5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR01L30MUT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
695
P_D
180
Storage Temperature Range
T_stg
−55 to +150
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.
Unit
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V_R = 10 V)
(V_R = 30 V)
I_R
mA
0.2
0.5
Forward Voltage
(I_F = 1 mA)
(I_F = 10 mA)
V_F
V
0.35
0.46
Total Capacitance
(V_R = 5.0 V, f = 1 MHz)
CT
0.8
pF
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