NSR01L30MUT5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR01L30MUT5G
Product Preview
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
• Very Low Forward Voltage Drop − 350 mV @ 1 mA
• Low Reverse Current − 0.2 mA @ 10 V
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• This is a Halide−Free Device
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
V_R
30
V
Forward Current (DC)
I_F
100
mA
Forward Surge Current
I_FSM
A
(60 Hz @ 1 cycle)
2.0
ESD Rating:
Human Body Model
ESD
>8.0
kV
Machine Model
>400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
EM
E
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR01L30MUT5G X3DFN2
(Pb−Free)
15000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
January, 2012 − Rev. P0
Publication Order Number:
NSR01L30MU/D