NSR0170DT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0170DT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Thermal Resistance
Junction-to-Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
RθJA
-
PD
-
Junction-to-Ambient (Note 2)
RθJA
-
Total Power Dissipation @ TA = 25°C
PD
-
Junction and Storage Temperature Range
TJ, Tstg
-
1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 15 mA)
Total Capacitance
(VR = 0 V, f = 1 MHz)
IR
-
-
VF
-
-
-
CT
-
Typ
Max
Unit
-
740
°C/W
-
160
mW
-
460
°C/W
-
270
mW
-
-55 to +150 °C
Typ
Max Unit
25
90
nA
-
3.0
µA
0.34
0.39
V
0.56
0.64
0.65
0.73
pF
2.0
-
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Total Capacitance
2
NSR0170D/D