NSR0170DT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0170DT1G
Product Preview
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc-dc
converter, clamping and protection applications in portable devices.
NSR0170DT in a SOD-323 small footprint package enables designers
to meet the challenging task of achieving higher efficiency designs and
meeting reduced space requirements.
Features
• Very Low Forward Voltage Drop - 560 mV @ 10
• Low Reverse Current - 25 nA @ 50 V V_R
• 70 mA of Continuous Forward Current
• Power Dissipation of 160 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance – CT = 2 pF
• NSV Prefix for Automotive and Other Applications Requiring
Unique site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb-free Device, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max
Unit
Reverse Voltage
Forward Current (DC)
Non-repetitive peak surge forward current
ESD Rating: Human Body Model
VR
IF
IFSM
ESD
70
V
70
mA
100
mA
Class 2
Machine Model
Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON
Semiconductor reserves the right to change or discontinue this product without
notice.
http://onsemi.com
70 V SCHOTTKY
BARRIER DIODE
MARKING DIAGRAM
xx = TBD (Device Code)
M = Date Code*
` = Assembly Location
ORDERING INFORMATION
Device
NSR0170DT1G
NSVR0170DT1G
Package
SOD-323
(Pb-Free)
Shipping^†
3000 / Tape
& Reel
© Semiconductor Components Industries, LLC, 2011
1
September 2013- Rev. P0
Publication Order Number:
NSR0170DT