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| NSR0115CQP6T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Cathode Schottky Diodes | |||
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NSR0115CQP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C, Single Diode)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 20 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 10 V)
Forward Voltage (IF = 10 mA)
Forward Voltage (IF = 10 mA)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1)
Symbol
Min
V(BR)R
15
CT
â
IR
â
VF
VF
â
trr
â
Max
Unit
â
Vdc
8.0
pF
15
uA
0.18
V
0.4
V
5.0
ns
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
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