NSQA6V8AW5T2_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Low Capacitance Quad Array for ESD Protection

NSQA6V8AW5T2 Series
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Power Dissipation
8 20 msec Double Exponential Waveform (Note 1)
P_PK
20
W
Steady State Power − 1 Diode (Note 2)
Thermal Resistance −
Junction−to−Ambient
Above 25°C, Derate
P_D
R_qJA
380
mW
327
°C/W
3.05
mW/°C
Operating Junction Temperature Range
T_J
−40 to +125
°C
Storage Temperature Range
T_stg
−55 to +150
°C
Lead Solder Temperature − Maximum 10 Seconds Duration
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P_D will be 25%. Mounted on FR4 board with min pad.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
NSQA6V8AW5T2
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage (I_T = 1 mA) (Note 3)
Leakage Current (V_RWM = 5.0 V)
Clamping Voltage 1 (I_PP = 1.6 A, 8 20 msec Waveform)
Maximum Peak Pulse Current (8 20 msec Waveform)
Junction Capacitance − (V_R = 0 V, f = 1 MHz)
− (V_R = 3.0 V, f = 1 MHz)
V_BR
6.4
6.8
7.1
V
I_R
−
−
1.0
mA
V_C
−
−
13
V
I_PP
−
−
1.6
A
C_J
−
12
15
pF
−
6.7
9.5
NSQA12VAW5T2
Breakdown Voltage (I_T = 5 mA) (Note 3)
Leakage Current (V_RWM = 9.0 V)
Zener Impedence (I_T = 5 mA)
Clamping Voltage 1 (I_PP = 0.9 A, 8 20 msec Waveform)
Maximum Peak Pulse Current (8 20 msec Waveform)
Junction Capacitance − (V_R = 0 V, f = 1 MHz)
3. V_BR is measured at pulse test current I_T.
V_BR
11.4
12.0
12.7
V
I_R
−
−
0.05
mA
Z_Z
−
−
30
W
V_C
−
−
23
V
I_PP
−
−
0.9
A
C_J
−
−
15
pF
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