NSPM1041B Datasheet, PDF (2/7 Pages) ON Semiconductor – Transient Voltage Suppressors

NSPM1041B
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_PP
R_DYN
I_T
V_C V_BR V_RWM I_{R IIRT VRWM VBR VC V}
R_DYN
I_PP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
Reverse Working Voltage
Breakdown Voltage
Breakdown Voltage
Reverse Leakage Current
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Clamping Voltage TLP
(Note 2)
V_RWM Pin 1 to Pin 2
3.3
V
V_RWM Pin 2 to Pin 1
4.8
V
V_BR I_T = 1 mA, Pin 1 to Pin 2
4.5
6.0
V
V_BR I_T = 1 mA, Pin 2 to Pin 1
4.85
6.0
V
I_R
V_RWM = 3.3 V, Pin 1 to Pin 2
1.0
mA
I_R
V_RWM = 4.8 V, Pin 2 to Pin 1
1.0
mA
V_C
I_PP = 1 A, t_p = 8 x 20 ms
5.6
V
V_C
I_PP = 35 A, t_p = 8 x 20 ms
7.2
V
V_C
I_PP = 80 A, t_p = 8 x 20 ms
8.0
V
V_C
I_PP = 125 A, t_p = 8 x 20 ms
10.8
V
V_C
I_PP = 8 A IEC 61000−4−2 Level 2 equivalent
5.6
V
(±4 kV Contact, ±8 kV Air)
I_PP = 16 A _{IEC 61000−4−2 Level 4 equivalent}
5.8
(±8 kV Contact, ±16 kV Air)
Dynamic Resistance
R_DYN TLP Pulse, Pin 1 to Pin 2
0.022
W
Dynamic Resistance
R_DYN TLP Pulse, Pin 2 to Pin 1
0.018
W
Junction Capacitance
C_J
V_R = 0 V, f = 1 MHz
480
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Non−repetitive current pulse at T_A = 25°C, per IEC61000−4−5 waveform.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z₀ = 50 W, t_p = 100 ns, t_r = 4 ns, averaging window; t₁ = 30 ns to t₂ = 60 ns.
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