NSP4201MR6 Datasheet, PDF (2/6 Pages) ON Semiconductor – Transient Voltage Suppressors

NSP4201MR6
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
I_F
V_F
P_pk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Forward Current
Forward Voltage @ I_F
Peak Power Dissipation
Capacitance @ V_R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional Surge Protection
ELECTRICAL CHARACTERISTICS (T_J=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
V_RWM (Note 2)
5.0
V
Breakdown Voltage
V_BR I_T=1 mA, (Note 3)
6.0
V
Reverse Leakage Current
I_R
V_RWM = 5 V
1.0
mA
Clamping Voltage
(t_p = 8/20 ms per Figure 1)
V_C
I_PP = 1 A, Any I/O to GND
I_PP = 5 A, Any I/O to GND
8.5
V
9.0
I_PP = 8 A, Any I/O to GND
10
I_PP = 25 A, Any I/O to GND
12
Junction Capacitance
C_J
V_R = 0 V, f=1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
C_J
V_R = 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
2. Surge protection devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. V_BR is measured at pulse test current I_T.
100
t_r
90
80
70
60
50
PEAK VALUE I_RSM @ 8 ms
PULSE WIDTH (t_P) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I_RSM/2 @ 20 ms
40
30
t_P
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 1. IEC61000−4−5 8/20 ms Pulse Waveform
20
18
16
14
12
10
I/O−GND
8
6
4
2
0
0
5
10
15
20
25
30
PEAK PULSE CURRENT (A)
Figure 2. Clamping Voltage vs. Peak Pulse Current
(t_p = 8/20 ms per Figure 1)
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